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Results 1 to 20 of 28 for query "F. Matsukura". (0.01 sec.)

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1.

Long-term inhibition of human T-lymphotropic virus type III/lymphadenopathy-associated virus (human immunodeficiency virus) DNA synthesis and RNA expression in T cells protected by 2',3'-dideoxynucleosides in vitro.
Mitsuya, H; Jarrett, R F; Matsukura, M; Di Marzo Veronese, F; DeVico, A L; Sarngadharan, M G; Johns, D G; Reitz, M S; Broder, S;

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2.

Interlayer Coherence in the $ u=1$ and $ u=2$ Bilayer Quantum Hall States
A. Sawada; Z.F. Ezawa; H. Ohno; Y. Horikoshi; A. Urayama; Y. Ohno; S. Kishimoto; F. Matsukura; N. Kumada;
4 Dec 1998

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3.

Phase Transition in u=2 Bilayer Quantum Hall State
A. Sawada; Z.F. Ezawa; H. Ohno; Y. Horikoshi; Y. Ohno; S. Kishimoto; F. Matsukura; M. Yasumoto; A. Urayama;
10 Dec 1997 / Physical Review Letters 80 (1998) 4534

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4.

Anomalous Stability of nu=1 Bilayer Quantum Hall State
A. Sawada; Z.F. Ezawa; H. Ohno; Y. Horikoshi; O. Sugie; S. Kishimoto; F. Matsukura; Y. Ohno; M. Yasumoto;
13 May 1997 / Solid State Comm. 103 (1997) 447

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5.

Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As
S. Souma; L. Chen; R. Oszwaldowski; T. Sato; F. Matsukura; T. Dietl; H. Ohno; T. Takahashi;
7 Jun 2016

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6.

Electric-field modulation of exchange stiffness in MgO/CoFeB with perpendicular anisotropy
T. Dohi; S. Kanai; A. Okada; F. Matsukura; H. Ohno;
28 Mar 2016

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7.

CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions
H. Sato; M. Yamanouchi; K. Miura; S. Ikeda; R. Koizumi; F. Matsukura; H. Ohno;
29 Aug 2012

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8.

Domain structure in CoFeB thin films with perpendicular magnetic anisotropy
M. Yamanouchi; A. Jander; P. Dhagat; S. Ikeda; F. Matsukura; H. Ohno;
23 Feb 2012

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9.

Anomalous Hall effect in field-effect structures of (Ga,Mn)As
D. Chiba; A. Werpachowska; M. Endo; Y. Nishitani; F. Matsukura; T. Diet; H. Ohno;
4 Jan 2011

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10.

Curie temperature versus hole concentration in field-effect structures of Ga1-xMnxAs
Y. Nishitani; D. Chiba; M. Endo; M. Sawicki; F. Matsukura; T. Dietl; H. Ohno;
22 Jan 2010

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11.

MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers
K. Mizunuma; S. Ikeda; J. H. Park; H. Yamamoto; H. Gan; K. Miura; H. Hasegawa; J. Hayakawa; F. Matsukura; H. Ohno;
22 Oct 2009

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12.

Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction
D Chiba; Y Sato; T Kita; F Matsukura; H Ohno;
19 Nov 2004 / Phys Rev Lett, 93 (21), 216602

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13.

Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga,Mn)As
M Yamanouchi; D Chiba; F Matsukura; T Dietl; H Ohno;
10 Mar 2006 / Phys Rev Lett, 96 (9), 096601

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14.

Domain-wall resistance in ferromagnetic (Ga,Mn)As
D Chiba; M Yamanouchi; F Matsukura; T Dietl; H Ohno;
10 Mar 2006 / Phys Rev Lett, 96 (9), 096602

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15.

Zener model description of ferromagnetism in zinc-blende magnetic semiconductors
T Dietl; H Ohno; F Matsukura; J Cibert; D Ferr;
11 Feb 2000 / Science, 287 (5455), 1019-22

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16.

Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor
D Chiba; M Yamanouchi; F Matsukura; H Ohno;
15 Aug 2003 / Science, 301 (5635), 943-5

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17.

Universality classes for domain wall motion in the ferromagnetic semiconductor (Ga,Mn)As
M Yamanouchi; J Ieda; F Matsukura; S E Barnes; S Maekawa; H Ohno;
21 Sep 2007 / Science, 317 (5845), 1726-9

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18.

Electric-field control of ferromagnetism
H Ohno; D Chiba; F Matsukura; T Omiya; E Abe; T Dietl; Y Ohno; K Ohtani;
21 Dec 2000 / Nature, 408 (6815), 944-6

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19.

Current-induced domain-wall switching in a ferromagnetic semiconductor structure
M Yamanouchi; D Chiba; F Matsukura; H Ohno;
1 Apr 2004 / Nature, 428 (6982), 539-42

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20.

Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As
M. Yamanouchi; D. Chiba; F. Matsukura; T. Dietl; H. Ohno;
23 Jan 2006

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